Polycrystalline monolithic magnesium aluminate spinels

ABSTRACT

Polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition. Articles made with the polycrystalline monolithic magnesium aluminate spinels also are disclosed.

The present invention is directed to polycrystalline monolithicmagnesium aluminate spinels. More specifically, the present invention isdirected to polycrystalline monolithic magnesium aluminate spinels withsmall grain sizes and may form thick deposits.

There is considerable interest in producing high quality spinels for useas multi-spectral optical material covering the visible tomid-wavelength infrared region. Spinels have superior properties overother materials currently used as multi-spectral optical material. Suchproperties include high hardness, i.e. 1645 Kg/mm² (Knoop, 200 g load)high flexural strength, i.e. 27,000 psi, low refractive index, i.e.1.639 at 4 microns, and high resistance to rain and sand erosion.Spinels are preferred over other competing materials such as aluminumoxynitride (ALON), sapphire, zinc sulfide, zinc selenide and magnesiumfluoride. Spinels have better transmission in the mid wavelengthinfrared range than ALON and sapphire. Spinel is also cubic with uniformproperties versus sapphire which is hexagonal with nonuniformproperties. In comparison to zinc sulfide, zinc selenide and magnesiumfluoride, spinels have better mechanical properties, and area moredurable with high resistance to rain and sand erosion.

Currently bulk spinels are produced by sintered powder processingtechniques but are still in the development phase. Such sinteredprocessing techniques may have made some progress in producing densematerial with acceptable properties, but important issues regardingprocess yields and reproducibility remain unsolved. Additionally, suchbulk spinels exhibit large inclusions which decrease light transmissionin the visible to mid-wavelength infrared regions and increaseabsorption and scattering of the light. Another problem with sinteredspinels is that they have large grains (150 microns and greater) andoften have bimodal grain structure which consists of clusters of smalland large grains. Large grains may be from powder agglomerates thatquickly sinter together and trap the original powders to form a porousstructure. Large grains decrease the strength of the spinels to makethem difficult to fabricate into good optical surfaces for mirrors andwindows due to grain pull-out.

Another issue with sintered processed spinels is the difficulty ofembedding electrically conductive metallic grids in spinel windows anddomes. Such windows and domes are typically used in aircraft of varioustypes as part of their radar or navigation apparatus. Spinels mayfunction as insulators and are used to protect the electricallyconductive metallic grids from electromagnetic interference. Embeddingthe electrically conductive metallic grids in sintered spinels presentsmany challenges in bonding a precision-polished spinel dome or windowonto another precision dome or window with grids on the bonding surface.The mating surfaces have to be made very precise for obtaining goodsurface contact and this increases the fabrication cost. This isparticularly difficult in domes due to their curved shape. One techniqueused is to apply a thin layer of glassy material in between the matingsurfaces to promote adhesion through the glass layer. This requiresglass to have a close refractive index match to the dome material.

Spinels may also be made by chemical vapor deposition processes;however, chemical vapor deposition processes produce spinels of thinfilms, i.e. 1 μm or less, which are unsuitable for windows and domes.The article Mikami, M., Y. Hokari, K. Egami, H. Tsuya, M. Kanamori(1983). Formation of Si Epi./MO Al ₂ O ₃ Epi./SiO ₂ /Si and itsEpitaxialfilm Quality. Extended Abstracts of the 15^(th) Conference onsolid State Devices and Materials Tokyo 1983: 31-34. discloses epitaxialgrowth of MgOAl₂O₃ on silicon substrates. The reactants used were Al,MgCl₂, H₂, CO₂ and HCl. Hydrochloric acid was used to convert Al toAlCl₃ which was then transported to the reaction zone. Nitrogen was usedas a carrier gas. The growth rate achieved was only 0.08 μm/minute (0.5μm/hour). The deposit was a film of only 0.1 μm to 0.8 μm. The authorsindicated low growth rate and formation of cracks in the spinel films asissues in trying to grow thicker deposits on the silicon.

In addition to all inorganic precursors, metal organic (MO) precursorsalso have been used to produce thin film spinels by chemical vapordeposition. Many of the studies have used a single source of MOprecursors such as metal alkoxides. Such alkoxides are typicallymoisture sensitive and produce spinels at low pressures of 1×10⁻⁶ to 0.5Torr which require more powerful vacuum pumps than high pressures andhave low deposition rates such as 8.5 μm/hour. In addition to alkoxides,MOs such as Al(CH₃)₃ and Mg(C₅H₅)₂ may be used to produce spinel films;however, these materials are moisture sensitive and pyrophoric and aredifficult to use to produce monolithic materials having thicknesses of 1mm and thicker. Another reason why MO precursors are not desirable isthat they are relatively expensive and this increases the cost of themonolithic material produced. MO precursors are generally used forcoating at low temperature depositions thus the producing bulk materialsrequires long periods and increases the cost of manufacturing bulkmaterials. Accordingly, there is still a need for monolithic spinelshaving properties which are suitable for use in mirrors, domes, windowsand other articles.

In one aspect a composition is composed of polycrystalline monolithicmagnesium aluminate with a grain size of 70 μm or less and a thicknessof at least 0.5 mm.

In another aspect a method includes: a) providing gaseous precursors ofmagnesium aluminate; b) reacting the gaseous precursors; and c)depositing polycrystalline monolithic magnesium aluminate on a substrateat a deposition rate of 0.5 μm to 5 μm per minute.

In a further aspect an article includes polycrystalline monolithicmagnesium aluminate with a grain size of 70 μm and a thickness of atleast 0.5 mm.

In an additional aspect an article includes one or more electricallyconductive and selectively passivated patterns, each pattern includesone or more metal layers and is joined directly to and between layers ofpolycrystalline monolithic magnesium aluminate with grain sizes of 70 μmor less and thicknesses of at least 0.5 mm.

In yet another aspect a method includes: a) providing a first layer ofpolycrystalline monolithic magnesium aluminate with a grain size of 70μm or less and a thickness of at least 0.5 mm; b) depositing anelectrically conductive and selectively passivated pattern on the firstlayer of the polycrystalline monolithic magnesium aluminate with a grainsize of 70 μm or less and a thickness of at least 0.5 mm; and c)depositing a second layer of monolithic magnesium aluminate with a grainsize of 70 μm or less and a thickness of at least 0.5 mm on theelectrically conductive selectively passivated pattern opposite thefirst layer of polycrystalline monolithic magnesium aluminate to form anarticle.

The polycrystalline monolithic magnesium aluminate compositions aretheoretically dense, i.e. 98% and greater, substantially void free, i.e.not porous, of high purity, i.e. 99% and greater, have small grain sizesthus providing high values of hardness and flexural strength in thematerial. Small grain sizes also make the compositions easier to polishthan large grain sizes. The compositions also have good physical,mechanical, optical and thermal properties. The polycrystallinemonolithic magnesium aluminate compositions may be deposited onsubstrates crack-free to make near-net shaped parts such as domes,windows, lenses, mirrors, beam splitters and reflectors. Domes andwindows may be used to enclose electrically conductive metallic grids.Such domes and windows may be used as parts for radar and navigationalapparatus or act as shields to electromagnetic interference radiation,radio frequency interference radiation and other undesired forms ofradiation. The articles made with the polycrystalline monolithicmagnesium aluminate compositions may be used for subterranean,terrestrial, marine, aeronautical vessels and structures.

FIG. 1 is a schematic of a chemical vapor deposition furnace forproducing spinels.

FIG. 2 is a cross-section of an article showing a portion of a patternedelectronically conductive and selectively passivated grid enclosed inpolycrystalline monolithic magnesium aluminate.

FIG. 3 is a cross-section of a portion of an article showing a patternedelectronically conductive and selectively passivated grid enclosed inpolycrystalline monolithic magnesium aluminate where the passivationlayer is discrete from the metal layer.

FIG. 4 is a cross-section of a portion of an article showing a patternedelectronically conductive and selectively passivated grid enclosed inpolycrystalline monolithic magnesium aluminate where the passivationlayer is discrete from the metal layer and the metal layer is joined tothe base or the article by a discrete bonding layer.

FIG. 5 is a top view showing a grid pattern of an electronicallyconductive and selectively passivated article in electricalcommunication with a bus bar.

As used throughout this specification, the following abbreviations havethe following meaning, unless the context clearly indicates otherwise: °C.=degrees Centigrade; K=degrees Kelvin; g=gram; Kg=kilograms;mm=nanometer; slpm=standard liters per minute; CVD=chemical vapordeposition; PVD=physical vapor deposition; CCVD=combustion chemicalvapor deposition; CACCVD=controlled atmosphere combustion chemical vapordeposition; Å=angstrom=10⁻¹⁰ meters; m=meters; mm=millimeters;cm=centimeters; cc=cubic centimeters; ohm-cm=electrical resistivity;μm=microns=micrometers=10⁻⁶ meters; UV=ultraviolet; IR=infrared;ohm/square=unit of sheet resistance; GHz=gigahertz; Hz=hertz=a periodicoccurrence of once per second has a frequency of 1 Hz; Torr=torr=a unitof pressure=1 mm Hg at 0° C.=133.322368 pascals; psi=pounds per squareinch=0.06805 atmospheres; 1 atm=1.01325×10⁶ dynes/cm²; MPa=megapascals;GPa=gigapascals; W=Watts; A/dm²=amperes/decimeter squared; and wt%=percent by weight; W/mK=thermal conductivity; EMI=electromagneticinterference; RFI=radio frequency interference; aspectratio=length/diameter of the article; and MWIR=mid-wavelength infraredregion (3-5 microns).

The term “monolithic” means composed of one solid piece. Magnesiumaluminate=magnesium aluminum oxide=MgAl₂O₄. The term “spinel”=magnesiumaluminate.

All percentages are by weight unless otherwise noted. All numericalranges are inclusive and combinable in any order, except where it islogical that such numerical ranges are constrained to add up to 100%.

The compositions are composed of polycrystalline monolithic magnesiumaluminate spinels with a grain size of 70 μm or less and a thickness ofat least 0.5 mm. The polycrystalline monolithic magnesium aluminatespinels are β-cubic which enables a uniformity of properties.

The polycrystalline monolithic magnesium aluminate spinels are preparedby CVD from gaseous precursors of elemental magnesium, aluminumcompounds and elemental oxygen or gaseous compounds containing oxygen.The gaseous precursors react with each other at a molar ratio of 1:2:4to produce polycrystalline monolithic aluminate spinels which are atleast 98% pure, typically 99.999% pure and greater. The CVD methodsprovide spinels which are suitable for multi-spectral opticalapplications covering the wavelength region, i.e. 0.2 to 6 μm.

Magnesium is used in its elemental form as it has sufficient vaporpressure of from 0.7 to 3 Torr to form a gas at reaction temperatures inthe CVD chamber. Sources of elemental magnesium include, but are notlimited to, inorganic magnesium compounds, such as magnesium halides,such as MgCl₂, MgBr₂, MgI₂, MgF₂, and mixtures thereof. Typically, MgCl₂is used as the source of magnesium for the spinels.

The magnesium compounds are placed in a retort of a CVD chamber as aliquid or a solid. The retort is heated at temperatures of 500° C. to1000° C., typically from 650° C. to 950° C., to generate gaseouselemental magnesium metal. Typically, magnesium is sublimated. Vaporpressures for magnesium compounds at such temperatures range from 0.7 to10 Torr, or from 1 to 8 Torr.

Aluminum compounds include, but are not limited to, inorganic aluminumcompounds, such as aluminum halides, such as AlCl₃, AlBr₃, AlI₃ andAlF₃, aluminum carbonyls, such as AL(CO)₃, and aluminum acetonates, suchas aluminum acetylacetonate, and mixtures thereof. Typically, aluminumhalides and aluminum acetonates are used as the source of aluminum. Moretypically, aluminum halides and aluminum acetylacetonate are used as asource of aluminum. Most typically aluminum halides, such as AlCl₃, areused.

Aluminum metal or an aluminum compound is placed in a retort of a CVDchamber as a liquid or a solid. If aluminum metal is used, it is reactedwith a halide and organic in situ to provide the desired compound. Theretort is heated to temperatures of 550° C. to 850° C. or such as from600° C. to 700° C. Vapor pressures for the aluminum compounds at suchtemperatures range from 0.1 to 6 Torr or from 0.5 to 4 Torr.

Elemental oxygen or oxygen containing compounds are provided fromsources outside the CVD chamber and are pumped into the furnace usingconventional apparatus. Sources of oxygen include, but are not limitedto, gaseous O₂, CO₂, NO₂, SO₂, H₂O₂, O₃, N₂O and H₂O. Typically gaseousO₂, CO₂, N₂O and H₂O are used as sources of oxygen.

The polycrystalline monolithic magnesium aluminate spinels have grainsizes of 70 μm and less. Typically the spinels have grain sizes of 1 μmto 60 μm, or such as from 2 μm to 50 μm or such as from 5 μm to 30 μm.

Such small grain sizes provide for flexural strength in the spinels suchthat they do not crack during formation and use. Flexural strengths mayrange from 150 Mpa to 300 Mpa. The Young's Modulus may range from 170 to290 Gpa.

The spinels are deposited on substrates at temperatures of 700° C. to1400° C. or such as from 800° C. to 1300° C. or such as from 900° C. to1200° C. Typically the spinels are deposited on the substrates attemperatures of 900° C. to 1100° C.

The spinels are deposited on substrates in CVD chambers at depositionrates of 0.1 to 5 μm/minute or such as from 0.5 to 2 μm/minute. CVDchambers typically include a quartz tube. The tubes may vary in size.Typically they are 15 cm in diameter by 100 cm long. FIG. 1 is aschematic of a quartz tube for CVD deposition of polycrystallinemonolithic magnesium aluminate formed using a mixture of AlCl₃, MgCl₂,CO₂, HCl, H₂ and N₂. The quartz tube 10 is heated with a clam shell tubefurnace (not shown) which has a temperature capability of 1200° C. Ingeneral the quartz tube 10 has three zones. The first two zones 12 and14 are used to heat the metallic precursors, such as Al metal and MgCl₂.Zone 1 may range from 600° C. to 700° C. and zone 2 may range from 750°C. to 950° C. The third zone 16 is used to deposit spinel 18 on ceramic,quartz, metallic or graphite mandrels 20. Deposition temperatures inzone 3 may range from 900° C. to 1100° C. The precursors are loaded inretorts 22 and 24, which may be made of quartz, stainless steel, orceramic materials. Examples of ceramic materials for retorts andmandrels are graphite, Si, SiC, Si₃N₄, BN, B₄C, Al₂O₃, AlN and MoSi₂.Examples of metals for retorts and mandrels are Ti, Mo and W.

Inert carrier gases, such as argon and nitrogen are used to transportprecursors from the retorts to the deposition area 26. The depositionarea typically includes four rectangular mandrel plates assembled as arectangular open box. On one side the spinel precursors and oxygensource are introduced into the deposition area through separateinjectors 28, 30 and 32. On the exhaust side a baffle plate (not shown)is provided to direct the reagent flow to the mandrel. After thereaction the products of the reaction and unused reagents pass throughfilters (not shown) to trap any particulate, acid vapors, such as HCl,and water vapors then pass through a vacuum pump (not shown) and anyexhaust gases are vented 34 to the atmosphere.

In general the flow rates of the precursors and carrier gases are high.Typically, flow range from 0.5 slpm to 200 slpm, or such as from 1 slpmto 100 slpm, or such as from 5 slpm to 50 slpm. Typically the flow ratesfor the aluminum and magnesium precursors range from 0.5 slpm to 5 slpm,or such as from 0.5 slpm to 2 slpm. Flow rates for oxygen and itscompounds, typically, range from 1 slpm to 10 slpm, or such as from 2slpm to 5 slpm. Flow rates for carrier gases typically range from 1 slpmto 10 slpm or such as from 2 slpm to 5 slpm.

The polycrystalline monolithic magnesium aluminate forms deposits havinga thickness of 0.5 mm and greater. Typically the deposit thicknessranges from 1 mm to 20 mm or such as from 5 mm to 10 mm.

After deposition the near-net shaped spinel may be surface treated toachieve a desired roughness. The deposits have a hardness of 1500 Kg/mm²to 1650 kg/mm² (Knoop, 200 g load) and a fracture toughness of 1.3 MPa/mto 1.7 MPa/m. Accordingly, the spinels are typically surface treatedwith diamond polishing pads. The hardness of the spinels enables theiruse as grocery scanners and for military armor applications.

The spinels also have high thermal conductivities of 12 W/mK to 18 W/mKat 298° K and a thermal expansion of 5×10⁻⁶ K⁻¹ to 6×10⁻⁶ K⁻¹ at 298° K.Such thermal properties enable the spinels to be used in ceramicsindustries where high temperature resistant parts are required.

The spinels also have a variety of applications for optical componentssuch as crack-free, near-net shaped lenses, windows, beam splitters,domes and reflectors. Such articles may be used in subterranean,terrestrial, marine and aeronautical vessels and structures. Forexample, the windows and domes may be used in aircraft and missiles fortargeting and reconnaissance applications in the visible to MWIRwavelength regions. Domes and windows may be used to encloseelectrically conductive metallic grids. Such domes and windows may beused as parts for radar and navigational apparatus or act as shields toelectromagnetic interference radiation, radio frequency interferenceradiation as well as other forms of radiation.

The electrically conductive metallic grids are selectively passivated toprotect the grids from corrosive and reductive conditions under whichthe spinel is applied. The electrically conductive grids may be composedof a metal, which is tolerant of the harsh conditions. Such metals areintrinsically passive (inert) and do not need to be encapsulated with anadditional passivation coat. However, many metals are corroded orreduced under the harsh conditions used to apply the materials whichencase the patterns. Such metals are selectively passivated byencapsulating them with one or more layers of an inert material.

Metal layers as well as passivation layers are selectively deposited onthe spinels to form a pattern. Generally, such patterns are a grid wherethe electrically conductive metal layers are in electrical communicationwith each other. A bus bar may be joined to the pattern to formelectrical communication between the pattern of the article and anotherelectronic component.

Metals used have electrical resistivities ranging from 50 micro-ohm-cmor less, or such as 50 micro-ohm-cm to 0.5 micro-ohm-cm, or such as from45 micro-ohm-cm to 1 micro-ohm-cm, or such as from 20 micro-ohm-cm to 5micro-ohm-cm. Measurements for electrical resistivity are at 25° C.

Suitable metals include, but are not limited to, noble metals such asgold, silver, platinum, palladium, and their alloys. Non-noble metalsalso may be employed. Examples of non-noble metals are copper, cobalt,chromium, tantalum, beryllium, nickel, molybdenum, tungsten, rhodium,iridium, ruthenium, nickel, titanium, tin, and alloys thereof. Suchmetals are deposited to a thickness such that the sheet resistivity ofthe metal and metal alloy layers range from 10 ohms/square or less, orsuch as 1 ohm/square to 10 ohms/square, or such as from 0.005ohms/square to 0.5 ohms/square, or such as from 0.05 ohms/square to 0.25ohms/square.

Metals are selectively deposited as one or more layers by methods whichinclude, but are not limited to, electrolytic plating, electrolessplating, immersion plating, physical vapor deposition including ionizedphysical vapor deposition (I-PVD), ionized metal plasma deposition(IMP), CCVD and CACCVD. Metals such as molybdenum, titanium, tantalumand tungsten are deposited by physical vapor deposition. Such methodsare known in the art or described in the literature. Conventionalplating baths, apparatus and methods may be used.

The width (thickness) of the metal layers may range from 0.5 microns to25 microns, or such as from 1 micron to 10 microns. The height(thickness) may range from 50 Å to 50,000 Å, or such as from 500 Å to40,000 Å, or such as from 1000 Å to 30,000 Å, or such as from 5000 Å to20,000 Å.

A first layer of spinel for encasing the grids is formed as a base andit is deposited on a substrate by CVD. After the spinel base is formedit may be machined, lapped and polished using conventional methods. Suchmaterials may be machined, lapped and polished to have a scratch/digspecification of 120/80 or better such as 80/50. The smaller thescratch/dig specification is the better the polish.

Optionally, one or more bonding layers may be deposited on the spinelbase to secure the metal to the base Such bonding layer materialsinclude, but are not limited to, metals such as chromium, titanium,tantalum, nickel, or combinations thereof, or compounds such as titaniumnitride, titanium dioxide, silicon or combinations thereof. Bondinglayers may range in width (thickness) of from 0.5 microns to 25 microns,or such as from 1 micron to 10 microns. The height (thickness) of thebonding layers may range from 50 Å to 1000 Å, or such as from 100 Å to500 Å, or such as from 200 Å to 400 Å.

The bonding layers may be deposited using methods which include, but arenot limited to, CVD, PVD, CCVD, CACCVD, electrolytic deposition andelectroless deposition. Typically, the bonding layers are deposited byCVD and PVD, more typically by PVD.

Passivation materials include, but are not limited to, oxides such asmetal oxides, and oxides of silicon, metals such as platinum, palladium,gold, rhodium, ruthenium, tantalum, and their alloys. Oxides include,but are not limited to, beryllium oxide, aluminum oxide, silicondioxide, titanium dioxide, tantalum dioxide, yttrium dioxide andzirconium dioxide. The passivation layers may be alternating layers oftwo or more of the passivation materials.

The passivation layers may be deposited by methods which include, butare not limited to, electrolytic deposition, CVD, PVD, CCVD, CACCVD.Examples of PVD methods suitable for depositing the passivation layersare by sputtering and e-beam evaporation. Width (thickness) of thepassivation layers ranges from 0.5 microns to 25 microns, or such asfrom 1 micron to 10 microns. The height (thickness) ranges from 50 Å to40,000 Å, or such as from 500 Å to 30,000 Å, or such as from 1000 Å to20,000 Å, or such as from 5000 Å to 10,000 Å.

FIG. 2 illustrates a cross-section of one embodiment of an electricallyconductive grid. A base 40 and top coat 42, which are composed ofpolycrystalline monolithic magnesium aluminate spinel. The electricallyconductive pattern 44 has a selectively deposited metal layer 46. Themetal layers form an interconnecting grid pattern as illustrated in FIG.5. The metal of the metal layers 46 can withstand the harsh conditionsof CVD deposition of the top coat 42 and adheres well to the base, thusthe metal is itself inherently passivated. Such metals includepalladium, platinum, gold, tantalum, titanium, tungsten and alloysthereof.

FIG. 3 illustrates a cross-section of another embodiment of the opticalarticle. A base 50 and top coat 52, both of which are composed ofpolycrystalline monolithic magnesium aluminate, enclose selectivelydeposited metal layers 54 in pattern 56. Each metal layer 54 has aselectively deposited passivation layer 58 encapsulating it. Examples ofsuch metals, which typically are encapsulated with a passivating layer,are PVD gold, copper and their alloys, and molybdenum. Examples ofmaterials used for passivation include aluminum oxide, titanium dioxide,silicon dioxide, platinum, palladium and electrolytic gold.

FIG. 4 illustrates a cross-section of an additional embodiment of theoptical article. A base 60 and top coat 62, both of which are composedof polycrystalline monolithic magnesium aluminate, enclose selectivelydeposited metal layers 64 in pattern 66. Metal layers 64 are bonded tobase 60 by bonding layers 68. The bonding layers may be a metaldifferent from the metal of metal layers 64 or may be an element such assilicon or an oxide such as titanium dioxide. Selectively depositedpassivation layers 69 coat metal layers 64 and bonding layers 68.

FIG. 5 illustrates a top view of an optical article without the topcoat. Grid pattern 70 includes the electrically conductive andselectively passivated layers of metal in pattern lines 72. The lines 72are in electrical communication with each other. Each line 72 isseparated from an adjacent line by spaces 74, which is composed of thebase material. A bus bar 76 is electrically connected to the grid 70,and the bus bar 76 connects the grid 70 to an electrical power source(not shown). The bus bar may be composed of any suitable metal such astitanium, tantalum, gold, silver, copper or any other conductive metal.

An article may have one or more electrically conductive patterns. Eachconductive pattern is separated from an adjacent pattern by one or morelayers of the spinel encasing material. Such layers range from 0.5 to 50mm thick, or such as 1 mm to 24 mm thick, or such as from 5 mm to 15 mmthick.

The patterns may be formed by photolithography processes. For example,after the spinel material is deposited a pattern may be formed withphotosensitive materials, such as photoresist or photosensitive inks.The photosensitive material may be applied to the spinel by spraycoating, roller coating, lamination or by ink-jet application. Aphototool or mask having a desired pattern may be applied to thephotosensitive material. When the photosensitive material is applied byink-jet application, the phototool may be excluded because the ink-jetapplies the material as a pattern. The photosensitive material is thenexposed to actinic radiation, and portions of the photosensitivematerial are developed. The remaining photosensitive material forms apattern of spaces and channels where the layers of the electricallyconducting material are to be deposited.

The patterns also may be formed by laser write. Positive photoresist isapplied to the dome or article. It is then mounted on a computercontrolled gimbal mount. A laser beam is selectively directed at thephotoresist. The photoresist is developed and a pattern is formed.

The patterns may have various distances between electrically conductinglines. For example the distances may range from 0.5 μm to 2000 μm, orsuch as from 10 μm to 1000 μm, or such as from 200 μm to 600 μm, or suchas from 50 μm to 100 μm.

The materials for the electrically conducting layers are then depositedin the channels or spaces. The materials, which are deposited byphysical vapor deposition, cover the top portions of the photosensitivematerials and the channels or spaces of the pattern. Portions of thewalls remain uncoated because they are not within the line of sight ofdeposition. These portions of the walls of the photosensitive materialsremain uncoated and a stripper may be used to solubilize or disperse thephotosensitive material to remove it. The photosensitive material withany materials deposited on it is removed by lift-off. The electricallyconductive layers remain. If both the top portions and walls of thephotosensitive material are coated such that a stripper can not makecontact with the photosensitive material, laser energy may be applied toremove any coating on the photosensitive material to expose it such thatthe stripper may contact it. One or more bus bars may be inserted toprovide electrical contact between the electrically conductive layersand an outside power source. When one or more passivation layers aredesired, the passivation layers may be deposited on the exposed portionsof the metal or metal alloy, prior to removing any remainingphotosensitive material. The remaining photosensitive material is thenstripped with a suitable stripper.

Portions of the metal or metal alloy, which are now exposed, areselectively coated with one or more passivation layers. Alternatively,all of the passivation layers may be selectively deposited on the metalor metal alloy after stripping the photosensitive material. A phototoolor mask having suitable dimensions is aligned in relation to the patternsuch that one or more layers of the passivation material selectivelyencapsulates any remaining exposed metal or metal alloy and bondingmaterial.

Phototools or masks used for deposition of the protective or passivationlayers have dimensions which depend upon the dimensions of theelectrically conductive pattern. Such masks are stencils havingapertures which circumvallate the electrically conductive layers. Theapertures are sufficiently wide to permit the passage of protectivematerial over the metal and metal alloy layers and along the sides ofthe layers during application of the passivation material.

In another embodiment the metal may be oxidized such that a film ofmetal oxide coats the metal and metal alloy layers. Oxidizing agentsinclude, but are not limited to, hydrogen peroxide, molecular oxygen,ozone, potassium permanganate, potassium dichromate, potassium chlorate,nitric acid, sulfuric acid or mixtures thereof.

Examples of metal oxides formed include, but are no limited to, goldtrioxide, silver oxide, copper oxide, beryllium oxide, cobaltous oxide,cobaltic oxide, cobaltocobaltic oxide, titanium dioxide, molybdenumdioxide, molybdenum sesquioxide, molybdenum trioxide, iridium dioxide,rhodium monoxide, rhodium dioxide, rhodium sesquioxide, rutheniumdioxide, tungsten dioxide, tungsten trioxide and tungsten pentaoxide.

Selective passivation means that only the electrically conductive layersalong with any bonding layers are encapsulated with the passivationmaterial. Intervening spaces between the electrically conductive patterndo not contain passivation material. This reduces or eliminates theundesired index of refraction of radiation from the article.Accordingly, radiation transmission from the article is improved overmany conventional articles.

After the passivation layers are deposited on the electricallyconductive patterns, a layer of spinel material is deposited by CVD toenclose the pattern. Because both layers are composed of the same spine,the interface of the two layers forms a strong bond.

After deposition, the second layer may be machined, lapped and polishedusing conventional methods. It is machined, lapped and polished to ascratch/dig specification of 120/80 or better such as 80/50. Optionally,an anti-reflection coating may be placed on the article. Suchanti-reflection coatings may lower the refractive index of the article.Applying an anti-reflective coating on it may reduce the refractiveindex to 1.3 and further improve the performance of the article. Suchanti-reflective coatings are dielectric materials such as fluorides,metal oxides and alumina.

The following examples further illustrate the invention but are notintended to limit its scope.

EXAMPLE 1

Spinel Production through Reaction of AlCl₃, Mg, CO₂, HCl and H₂

Spinel is produced by reacting a mixture of AlCl₃ gas and Mg vapors withCO₂ and H₂ on a heated silicon carbide mandrel in a CVD chamber. Thespinel is expected to have grain sizes of 70 microns and less. The CVDchamber is made of a quartz tube with SiC liner on the inside of thetube. Two graphite retorts are mounted inside the SiC liner and are usedto contain Al and Mg. AlCl₃ is produced by reacting solid aluminum withHCl gas at 600-700° C. (reaction 1). Magnesium gas is produced bysublimating Mg at 500-650° C. (reaction 2). Since Mg may react with thequartz tube, the setup is designed such that Mg vapors stay inside theSiC liner and do not come in contact with the quartz tube. This isensured by plugging the gap between the quartz tube and SiC liners withalumina cloth at the two ends. Inert argon (Ar) gas is always flowingthrough the Mg retort at temperatures of 20-500° C. to ensure that Mgdoes not auto-ignite.

1. 2Al_((s))+6HCl_((g))+heat=2AlCl_(3(g))+3H_(2(g))

2. Mg(s)+heat=Mg_((g))

3.2AlCl_(3(g))+Mg_((g))+3H_(2(g))+4CO_(2(g))+heat=MgAl₂O_(4(s))+6HCl_((g))+4CO_((g))

Since the vapor pressure of Mg is rather low, i.e. 0.7 Torr at 500° C.,to flow sufficient quantity of Mg vapors the furnace pressure is kept at20 Torr. The mandrel temperature is controlled at 900-1150° C. The flowrates of the reagents are as follows:

TABLE 1 REAGENT FLOW RATES Argon at Aluminum retort 0.5-0.75 slpm Argonat Magnesium retort 0.5-1.5 slpm Argon with CO₂ and H₂ 0.5-1 slpm HCl0.15-0.2 slpm Carbon dioxide 1-5 slpm H₂ 2-6 slpm

The average deposition rate is 1 μm/minute. The resulting spinel depositis expected to be a polycrystalline monolithic aluminate of 1-3 mm thickwhich is crack free and at least 98% pure (reaction 3). The transmissionrange of the spinel is expected to be 0.2-6 microns.

EXAMPLE 2 Spinel Production through Reaction of AlCl₃, MgCl₂, CO₂, HCland H₂

Spinel is produced by reacting a mixture of AlCl₃ gas and MgCl₂ gas withCO₂ and H₂ on a heated quartz mandrel in a CVD chamber. The spinel isexpected to have grain sizes of 70 microns and less. The CVD chamber isa quartz tube with a quartz liner on the inside of the tube. AlCl₃ isproduced by reacting solid aluminum with HCl gas at 600-700° C.(reaction 4). MgCl₂ gas is produced by sublimating MgCl₂ solid at750-950° C. (reaction 5).

4. 2Al_((s))+6HCl_((g))+heat=2AlCl_(3(g))+3H_(2(g))

5. MgCl_(2s))+heat=MgCl_(2(g))

6.2AlCl_(3(g))+MgCl_(2(g))+4H_(2(g))+4CO_(2(g))+heat=MgAl₂O_(4(s))+8HCl_((g))+4CO_((g))

The mandrel temperature is controlled at 900-1150° C. and the furnacepressure is kept in the range of 20-100 Torr. The flow rates of thereagents are as follows:

TABLE 2 REAGENT FLOW RATE Argon at Aluminum retort 0.5-1 slpm Argon atMagnesium chloride retort 0.5-2 slpm Argon with CO₂ 0.5-1 slpm HCl0.15-0.2 slpm   Carbon dioxide   1-5 slpm H₂   2-6 slpm

Deposition is done for 80 hours to deposit a spinel on the mandrelhaving a thickness of 4-5 mm. The spinel is produced according toreaction 6. The spinel is expected to be a polycrystalline monolithicmagnesium aluminate which is crack free and is at least 98% pure. Thespinel is expected to have a transmission in the range of 0.2-6 microns.

EXAMPLE 3 Spinel Production through Reaction of AlCl₃, MgCl₂, N₂O, HCland H₂

The method describe in Example 2 is repeated except that CO₂ is replacedwith N₂O and Ar is replaced with N₂. The flow rate of N₂ is the same asAr and the flow rate of N₂O is the same as CO₂ in Example 2. The spinelis produced according to reaction 7.

7.2AlCl_(3(g))+MgCl_(2(g))+4H_(2(g))+4N₂O_((g))+heat=MgAl₂O_(4(s))+8HCl_((g))+4N_(2(g))

Deposition is done until the thickness of the spinel on the mandrel is4-5 mm thick. The spinel is expected to have the same properties as inExample 2.

EXAMPLE 4 Spinel Production through Reaction of AlCl₃, Mg, N₂O, HCl andH₂

The method described in Example 1 is repeated except that CO₂ isreplaced with N₂O and the carrier gas is replaced with N₂. The flow rateof N₂O remains the same as that of CO₂ and the flow rate of N₂ is thesame as Ar in Example 1. The spinel is produced according to reaction 8.

8.2AlCl_(3(g))+Mg_((g))+3H_(2(g))+4N₂O_((g))+heat=MgAl₂O_(4(s))+6HCl_((g))+4N_(2(g))

Deposition is done until a thickness of the spinel on the mandrel is 1-3mm thick. The spinel is expected to have the same properties as inExample 1.

EXAMPLE 5 Spinel Production through Reaction of AluminumAcetylacetonate, Mg, O₂ and N₂

Spinel is produced by reacting a mixture of aluminum acetylacetonate andMg vapors with O₂ on a heated alumina mandrel in a CVD chamber. Thespinel is expected to have a grain size of 70 microns and less. The CVDchamber includes a quartz tube with an alumina liner on the inside ofthe tube. Aluminum acetylacetonate gas is produced by sublimating solidaluminum acetylacetonate in a retort at a temperature range of 140-170°C. Magnesium gas is produced by sublimating Mg at 500° C. Since Mgreacts with quartz tube the setup is designed as in Example 1 such thatMg vapors stay inside the alumina liner and do not come in contact withthe quartz tube. Additionally, the retort containing the magnesium iskept below magnesium auto-ignition temperature of 510° C. and keepinginert argon gas flowing through the magnesium retort.

The CVD chamber pressure is kept at 10-20 Torr since the vapor pressureof magnesium is 0.7 Torr at 500° C. The mandrel temperature iscontrolled at 900-1100° C. The flow rates are as follows:

TABLE 3 REACTANT FLOW RATE Argon at Aluminum retort 0.5-0.75 slpm  Argon at Magnesium retort 0.5-2 slpm Argon with O₂ 0.5-1 slpm Oxygen0.5-1 slpm

The spinel deposition is performed for 50 hours. The deposition isexpected to produce a polycrystalline monolithic magnesium aluminatespinel with an average thickness on the mandrel of 2.5-3.5 mm. Thespinel is generated (machined) on a rotary grinder and then lapped on alapping machine with diamond slurry of grit size 32-0.5 cm. Finally, thelapped spinel is polished on a polishing spindle using fine diamondpowder solution. The spinel is expected to be crack free and 98% pure.The spinel is expected to have a transmission of 0.2-6 microns.

EXAMPLE 6 Spinel Production through Reaction of AluminumAcetylacetonate, Mg, O₂, H₂O and N₂

The method describe in Example 5 is repeated except that water is addedto the reaction mixture. Water is added by flowing N₂, which mixes withO₂, at a rate of 0.5-1 slpm through a water bubbler. The resultingpolycrystalline monolithic magnesium aluminate spinel is expected tohave the same properties as in Example 5.

EXAMPLE 7 Spinel Production through Aluminum Acetylacetonate, Mg, H₂O₂,H₂O and N₂

The method describe in Example 5 is repeated except that hydrogenperoxide is used as the source of oxygen. A 30% H₂O₂ solution in wateris used and N₂ is bubbled through the H₂O₂ to carry a mixture of H₂O₂and H₂O to the deposition area of the CVD chamber. The flow rate of N₂is 0.5-2 slpm and the temperature of the H₂O₂ bubbler is maintained at20° C.

EXAMPLE 8 Spinel Production through Reaction of AluminumAcetylacetonate, Mg, O₃ and N₂

Spinel is produced by reacting a mixture of aluminum acetylacetonate andMg with O₃ on a heated quartz mandrel in a CVD chamber. O₃ is providedby an O₃ generator. The spinel is expected to have a grain size of 70microns and less. The CVD chamber includes a quartz tube with a quartzliner on the inside of the tube. Aluminum acetylacetonate gas isproduced by sublimating solid aluminum acetylacetonate in a retort at atemperature range of 140-170° C. and Mg gas is produced by sublimatingMg at 500° C. Nitrogen is used as a carrier gas to carry the precursorsto the deposition area of the chamber. O₃ is mixed with N₂ and isseparately introduced in the deposition area. The mandrel temperature iscontrolled at 100-600° C. The CVD chamber pressure is maintained in arange of 20-100 Torr. The flow rates of the reagents are as follows:

TABLE 4 REAGENT FLOW RATE N₂ at Aluminum retort 0.5-1 slpm N₂ atMagnesium retort 0.5-2.5 slpm   N₂ with O₃ 0.5-1 slpm O₃ 0.5-1 slpm

The spinel deposition is performed for 30 hours. The deposition producesa polycrystalline monolithic magnesium alumina spinel on the mandrelwith an average thickness of 0.5-1 mm. The material is machined, lappedand polished. The spinel is expected to be crack free and at least 98%pure. The spinel has a transmission of 0.2-6 microns.

EXAMPLE 9 Spinel Production through Aluminum and MagnesiumAcetylacetonate, H₂O and N₂

Spinel is produced by reacting a mixture of aluminum acetylacetonate andmagnesium acetylacetonate with H₂O on a heated quartz mandrel in a CVDchamber. The spinel is expected to have grain sizes of 70 microns andless. The CVD chamber includes a quartz tube with a quartz liner on theinside of the tube. Aluminum acetylacetonate gas is produced bysublimating solid aluminum acetylacetonate at a temperature range of140-170° C. Magnesium acetylacetonate gas is produced by sublimatingmagnesium acetylacetonate at a temperature range of 100-300° C. Themandrel temperature is controlled in a range of 250-600° C. and the CVDchamber pressure is maintained at a range of 20-100 Torr. The flow ratesof the reagents are as follows:

TABLE 5 REAGENT FLOW RATE N₂ at Aluminum retort 0.5-1.5 slpm N₂ atMagnesium retort 0.5-1.5 slpm N₂ bubbling through H₂O   1-2.5 slpm

The spinel deposition is performed for 30 hours. The deposition produceda polycrystalline monolithic magnesium aluminate spinel with a thicknessof 0.5-1.5 mm thick. The spinel is expected to be crack free and atleast 98% pure. The transmission is expected to be in a range of 0.2-6microns.

EXAMPLE 10 Spinel Durable Coating on CLEARTRAN™ ZnS

Spinel is produced by reacting a mixture of aluminum acetylacetonate andmagnesium gas with oxygen to produce a polycrystalline monolithicmagnesium aluminate with grain sizes of 70 microns and less. The CVDchamber includes a quartz tube with an alumina liner on the inside ofthe tube. The mandrels are made of alumina and three 5 cm diameterCLEARTRAN™ ZnS polished substrates (available from Rohm and Haas Companythrough its Advanced Materials Business, Woburn, Mass., USA) are placedon the bottom of the mandrel in the deposition area of the chamber.Aluminum acetylacetonate gas is produced by sublimating solid aluminumacetylacetonate in a temperature range of 140-170° C. Magnesium gas isproduced by sublimating Mg (s) at 500° C. Since Mg reacts with quartzthe setup is designed such that Mg gas stays inside of the alumina linerand does not come in contact with the quartz tube as describe inExample 1. Additionally, the Mg retort is kept at a temperature below510° C. and inert Ar gas is always kept flowing through the retort toprevent auto-ignition of Mg.

The mandrel temperature is maintained at 550° C. and the chamberpressure is at 20 Torr. The flow rate of the reagents is as follows:

TABLE 6 REAGENT FLOW RATE Ar at Aluminum retort 0.5-0.75 slpm   Ar atMagnesium retort 0.5-1.5 slpm   Ar with O₂ 0.5-1 slpm Oxygen 0.5-1 slpm

The deposition is done for 25 hours. The deposition produces apolycrystalline monolithic magnesium aluminate spinel coating on the ZnSsubstrates with a thickness range of 0.75-1 mm. The deposits areexpected to be crack free and at least 98% pure. Transmission in therange of 0.2-6 microns is expected.

Each coating is tested for its adhesion to the ZnS substrates. Theconventional ASTM D-3359-02 tape test is performed by applying tape tothe spinel coating and pulling the tape off. No spinel material isexpected to be seen on the tape after pulling it from the coating.

EXAMPLE 11 Spinel Articles with Titanium-Tungsten (Ti—W) ConductiveLayer

Polycrystalline monolithic magnesium aluminate is produced by the methoddisclosed in Example 1. The silicon carbide mandrel is a flatrectangular shaped mandrel. The average deposition rate of the magnesiumaluminate precursors is 5 microns/minute.

After the spinel is deposited on the mandrel, the deposit is removedfrom the mandrel and machined to remove any silicon carbide contaminantand to smooth the surface. The spinel is then machined to the requireddimensions, and lapped and polished using conventional methods topolishing specifications of scratch/dig=80/50.

The polished spinel is then coated with a negative acting photoresistand exposed to radiation through a patterned mask to form line widths of10 microns and spacings between the lines of 300 microns and acontinuous coated area around the periphery of 1 cm wide to act as abuss bar to make electrical contact to a metal grid to be placed on thespinel. The unexposed photoresist is developed away to form patternlines on the spinel substrate.

Titanium metal having a thickness of 300 Å is deposited on the patternlines using an e-beam deposition method to form the grid. A 20,000 Ålayer of titanium-tungsten (Ti—W) having a composition of 10% titaniumand 90% tungsten is deposited on the titanium by sputtering. Thephotoresist remaining on the spinel is stripped using acetone.

The spinel with the electrical conducting pattern is placed in a CVDchamber. The bus bar area is protected with a graphite fixture toprevent deposition of magnesium aluminate spinel in this area. Thedeposition method described in Example 1 is used to deposit spinelmaterial on the passivated metal grid. After deposition is complete thearticle is machined, lapped and polished to a scratch/dig ratio of 80/50and a thickness of 1 mm. The article with the buried electricalconducting pattern is expected to have a transmission in the range of0.2-6 microns. The sheet resistance of the conducting pattern isexpected to be less than 0.5 ohms/square.

EXAMPLE 12 Spinel Articles with Molybdenum (Mo) Conductive Layer

Polycrystalline monolithic magnesium aluminate substrates are preparedaccording to the method of Example 1 except that the mandrels are madeof alumina. A photoresist pattern is applied to the polycrystallinemonolithic magnesium aluminate substrates as described in Example 11.

Titanium metal having a thickness of 300 Å is deposited on the patternlines using a conventional sputtering deposition method. After thedeposition of the titanium layer, a layer of titanium dioxide having athickness of 500 Å is deposited on the titanium layer by a conventionale-beam physical vapor deposition method. Molybdenum having a thicknessof 10,000 Å is deposited on the titanium dioxide layer by a conventionalsputtering deposition technique. The photoresist remaining on the spinelis stripped using acetone. In order to passivate and protect the exposedTi/TiO₂/Mo metal during the subsequent overcoat deposition, the articleswith the exposed Ti/TiO₂/Mo metallic pattern are heated to 250° C. forat least one hour in an atmosphere of oxygen to oxidize the exposedTi/TiO₂/Mo on all sides.

A spinel top coat is deposited on each spinel base with the conductivegrid using the CVD method as described in Example 1. After deposition ofthe top layer, the article is machined, lapped and polished to ascratch/dig ratio of 80/50. The articles are expected to have atransmission in the range of 0.2-6 microns. The sheet resistance of theconducting patterns is expected to be less than 1 ohm/square.

EXAMPLE 13 Spinel Articles with Gold Conducting layer Passivated withPlatinum

A polycrystalline monolithic magnesium aluminate spinel is prepared bythe method described in Example 2 except the mandrels are made ofalumina.

After deposition is complete the spinel is removed from the mandrels andmachined to remove any alumina contaminants and to smooth the surface. Asquare pattern is then formed on the spinels using photolithographic andphysical vapor deposition processes. A negative-acting photoresist isroller coated on the spinels to a thickness of 1 micron. A phototoolhaving the desired pattern is applied to the negative-acting photoresistand exposed to UV radiation with a conventional UV lamp for a sufficienttime to cure the exposed portions of the photoresist. After thephotoresist is cured it is developed in a 1 wt % solution of sodiumcarbonate monohydrate to remove the unexposed portions of thephotoresist.

The imaged spinel substrates are then placed in a conventional e-beamchamber to deposit a chromium bonding layer. Chromium depositionproceeds until a layer (height) of 200 Å of chromium is deposited on thespinel portions not covered by cured photoresist. The chamber is thencleaned and the parameters are set for e-beam deposition of gold on thechromium bonding layer. Gold is deposited on the chromium bonding layeruntil a layer (height) of gold of 5000 Å is formed.

After the layers of chromium and gold are deposited, the remainingphotoresist is stripped with acetone. After stripping the spinelsubstrates with the chromium and gold layers are prepped forpassivation.

The substrates are first electrolytically cleaned in a bath ofRONACLEAN™ GP-300 LF for 10 seconds at a current density of 1 A/dm² andat a bath temperature of 50° C. The substrates are then removed andimmersed in a 25 wt % solution of sulfuric acid for 10 seconds at roomtemperature. After acid cleaning the substrates are removed and rinsedwith tap water. The substrates are then placed in a platinum metalelectroplating bath.

The platinum bath includes 20 gm/L of chloroplatinic acid, whichprovides a platinum ion concentration of 15 gm/L. The bath also includes300 gm/L of hydrogen chloride. The pH of the bath is less than 1.

The current density is 15 A/dm². Plating is done until the chromium andgold layers are encapsulated with 5000 Å (height) of platinum. The widthof the metal plated lines is 15 microns and the spacing between thelines is 520 microns.

The spinels with the selectively passivated grids are then placed in aCVD chamber where they are coated with polycrystalline monolithicmagnesium aluminate to a thickness of 7 mm. The coating method is thesame method as described in Example 2 above. The articles are machined,lapped and polished to a scratch/dig ratio of 80/50.

The articles are expected to be crack free and they are expected to havea transmission in the range of 0.2-6 microns.

EXAMPLE 14 Spinel Articles with Gold Conductive Layer Passivated withGold

A chromium bonding layer is deposited on polycrystalline monolithicmagnesium aluminate substrates as described in Example 13. A gold layeris then deposited on the chromium layer by physical vapor deposition asdescribed in Example 13 to form a gold layer of 5000 Å (height). Afterthe layer of gold is deposited on the chromium layer, the substrates arethen electrically cleaned in a bath of RONACLEAN™ GP-300 LF for 10seconds, and also cleaned for 10 seconds in a bath of 25 wt % sulfuricacid. The spinel substrates are then rinsed with tap water for 5seconds.

The cleaned substrates are then selectively passivated with electrolyticgold. The substrates are placed in an electrolytic gold bath (AURALL™364A STRIKE, obtainable from Rohm and Haas Electronic Materials, L.L.C.,Marlborough, Mass.) and electrolytic gold is deposited over the chromiumand physical vapor deposited gold for a period of 60 seconds toencapsulate them. The pH of the bath is 4 and the bath temperature is40° C. The current density is 0.2 A/dm² during gold deposition. Theelectrolytic gold forms a gold layer 4500 Å thick (height).

The spinel substrates with the electrically conductive and selectivelypassivated patterns are then top coated with spinel according the methoddescribed in Example 13.

The final articles are expected to be crack free and have a transmissionin the range of 0.2-6 microns. The sheet resistance of the conductingpattern is expected to be less than 0.6 ohms/square.

EXAMPLE 15 Spinel Fabrication through Reaction of AlCl₃, MgCl₂, CO₂, HCland H₂

Spinel was produced by reacting a mixture of AlCl₃ and MgCl₂ vapors withCO₂ and H₂ on a heated quartz mandrel in a CVD chamber. The CVD chamberwas made of a quartz tube with a secondary quartz liner tube inside ofthe main tube. Two graphite retorts were mounted inside the main tubeand were used to contain Al and MgCl₂. AlCl₃ was produced by reactingsolid aluminum with HCl gas at a temperature of 600° C. (reaction 1). Amixture of HCl and N₂ was passed through the Al retort to carry theAlCl₃ to the reaction area. MgCl₂ gas was produced by sublimating MgCl₂solid at 850° C. (reaction 2). Nitrogen was passed through the MgCl₂retort to carry MgCl₂ vapors to the reaction area. A mixture of CO₂, H₂and N₂ was passed through the central injector connected to the reactionzone.

The mandrel temperature was controlled at 1000° C. and the furnacepressure was kept at pressures of 50 and 100 Torr. The flow rates of thereagents were as follows:

TABLE 7 REAGENT FLOW RATE Nitrogen at Aluminum retort 0.5 slpm Nitrogenat Magnesium chloride retort 0.6-0.8 slpm Nitrogen with CO₂ 0.5 slpm HCl0.10-0.15 slpm Carbon dioxide 1-1.5 slpm H₂ 2-3 slpm

The deposition was performed on four quartz mandrels which were arrangedin the form of an open box inside the liner tube. Some of the mandrelswere coated with mold release coatings. Each deposition was performedfor 8 hours. After the deposition, a uniform coating was observed on theinlet flange and mandrels. The top surface of the deposit was observedunder an optical microscope and showed the presence of smallcrystallites. Scanning electron microscope energy dispersive X-rayanalysis (SEM-EDS) using Hitachi S-3400N VP-SEM system and X-rayphotoelectron spectroscopy (XPS) analyses were performed on the depositsand indicated strong peaks of Al, Mg and O. An X-ray diffraction scan ofthe deposit with Rigaku D Max 2500 using copper k alpha=1.54 Åwavelength indicated the presence of spinel. Seven strong X-raydiffraction peaks observed for spinel were located at (2 Theta, “d”values (Å)) of (19.001, 4.6668), (31.273, 2.8578), (36.849, 2.4371),(44.814, 2.0208), (55.66, 1.65), (59.362, 1.5556) and (65.241, 1.4289).

1. A composition consists of polycrystalline monolithic magnesiumaluminate with a grain size of 70 μm or less and a thickness of at least0.5 mm.
 2. A method comprising: a) providing gaseous precursors ofpolycrystalline monolithic magnesium aluminate; b) reacting the gaseousprecursors; and c) depositing polycrystalline monolithic magnesiumaluminate on a substrate at a deposition rate of 0.5 cm/minute to 5μm/minute.
 3. An article comprises polycrystalline monolithic magnesiumaluminate with a grain size of 70 μm or less and a thickness of at least0.5 mm.
 4. An article comprising one or more electrically conductive andselectively passivated patterns, each pattern comprises one or moremetal layers, each pattern is joined to and is between layers ofpolycrysialline monolithic magnesium aluminate with grains sizes of 70μm or less and thicknesses of at least 0.5 mm.
 5. A method comprising:a) providing a first layer of polycrystalline monolithic magnesiumaluminate with a grain size of 70 μm or less and a thickness of at least0.5 mm; b) depositing an electrically conductive and selectivelypassivated pattern on the first layer of the polycrystalline monolithicmagnesium aluminate with a grain size of 70 μm or less and a thicknessof at least 0.5 mm; c) depositing a second layer of polycrystallinemonolithic magnesium aluminate with a grain size of 70 μm or less and athickness of at least 0.5 mm on the electrically conductive andselectively passivated pattern opposite the first layer ofpolycrystalline monolithic magnesium aluminate to form an article. 6.The method of claim 4, wherein the electrically conductive andselectively passivated pattern comprises one or more metal layers. 7.The method of claim 6, wherein the one or more metal or metal alloylayers is deposited on the pattern by CVD, PVD, CCVD, CACCVD, orelectrolytic deposition.